Irf244 Mosfet

14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs, IRF244 Datasheet. IRF244 14a And 13a, 275v And 250v, 0.28 And 0.34 Ohm, N-channel Power MOSFETs. These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Details, datasheet, quote on part number: IRF244

Part	IRF244
Category	Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
Description	14a And 13a, 275v And 250v, 0.28 And 0.34 Ohm, N-channel Power MOSFETs
Company	Intersil Corporation
Datasheet	Download IRF244 Datasheet
Quote

Features, Applications

Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17423.

Features

14A and 13A, 275V and 250V rDS(ON) = 0.28 and 0.34 Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance 250V DC Rated 120V AC Line System Operation Related Literature - TB334 'Guidelines for Soldering Surface Mount Components to PC Boards'

NOTE: When ordering, include the entire part number.

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright

Absolute Maximum Ratings = 25oC, Unless Otherwise Specified

IRF244 Drain to Source Voltage (Note 1). VDS Drain to Gate Voltage (RGS = 20k) (Note 1). VDGR Continuous Drain Current. = 100oC.ID Pulsed Drain Current (Note 3). IDM Gate to Source Voltage. VGS Maximum Power Dissipation. PD Linear Derating Factor. Single Pulse Avalanche Energy Rating (Note 4). EAS Operating and Storage Temperature. TJ, TSTG Maximum Temperature for Soldering Leads 0.063in (1.6mm) from case for 10s. TL Package Body for 10s, see 300 260 UNITS W/oC mJ oC

CAUTION: Stresses above those listed in 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

= 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS VGS = 250µA (Figure 10) MIN TYP MAX UNITS

Drain to Source Breakdown Voltage IRF246, IRF247 Gate to Threshold Voltage Zero-Gate Voltage Drain Current

On-State Drain Current (Note IRF245, IRF247 Gate to Source Leakage Current Drain to Source On-State Resistance (Note IRF245, IRF247 Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain 'Miller' Charge

gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd VGS = 14A, VDS 0.8 x Rated BVDSS, Ig(REF) = 1.5mA, (Figures 19, 20) Gate Charge is Essentially Independent of Operating Temperature VDS = 8A, (Figure 12) VDD = 8.9 (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature 6.7 -

PARAMETER Input Capacitance Output Capacitance Reverse-Transfer Capacitance Internal Drain Inductance = 25oC, Unless Otherwise Specified (Continued) SYMBOL CISS COSS CRSS LD Measured Between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die Measured From The Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances

PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode

Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovered Charge Forward Turn-On Time NOTES:

= 25oC, ISD = 14A, VGS = 0V (Figure = 25oC, ISD = 14A, dISD/dt = 25oC, ISD = 14A, dISD/dt = 100A/µs Intrinsic Turn-On Time is Negligible, Turn-On Speed is Substantially Controlled + LD

2. Pulse test: pulse width 300µs, duty cycle 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting = 25, peak IAS = 14A. See Figures 15, 16.

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Type Designator: IRFZ44

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Drain Current |Id|: 35 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 67 nC

Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm

Package: TO220

IRFZ44 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFZ44 Datasheet (PDF)

0.1. irfz44ns 1.pdf Size:57K _philips

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a surface mounting VDS Drain-source voltage 55 Vplastic envelope using trench ID Drain current (DC) 49 Atechnology. The device feat

0.2. irfz44n 1.pdf Size:52K _philips

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 49 Afeatures very low on-s

0.3. irfz44ns 1.pdf Size:57K _international_rectifier

0.4. irfz44vpbf.pdf Size:226K _international_rectifier

PD - 94826AIRFZ44VPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt Rating VDSS = 60Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 16.5ml Fully Avalanche Rated Gl Optimized for SMPS ApplicationsID = 55ASl Lead-FreeDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced pro

0.5. irfz44v.pdf Size:229K _international_rectifier

PD - 93957AIRFZ44VHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 16.5mWG Fast Switching Fully Avalanche RatedID = 55A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to ac

0.6. irfz44rpbf.pdf Size:221K _international_rectifier

PD - 94823IRFZ44RPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt Rating VDSS = 60Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.028Gl Fully Avalanche Ratedl Drop in Replacement of the IRFZ44ID = 50*Afor Linear/Audio ApplicationsSl Lead-FreeDescriptionAdvanced HEXFET Power MOSFETs from Internation

0.7. irfz44npbf.pdf Size:226K _international_rectifier

PD - 94787BIRFZ44NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 17.5ml Fully Avalanche RatedGl Lead-FreeID = 49ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveex

0.8. irfz44e.pdf Size:96K _international_rectifier

PD - 91671BIRFZ44EHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Dynamic dv/dt Rating 175C Operating Temperature Fast SwitchingRDS(on) = 0.023G Fully Avalanche RatedID = 48ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per silicon area. Thisbenefi

0.9. irfz44.pdf Size:859K _international_rectifier

PD - 94943IRFZ44PbF Lead-Free01/14/04Document Number: 91291 www.vishay.com1IRFZ44PbFDocument Number: 91291 www.vishay.com2IRFZ44PbFDocument Number: 91291 www.vishay.com3IRFZ44PbFDocument Number: 91291 www.vishay.com4IRFZ44PbFDocument Number: 91291 www.vishay.com5IRFZ44PbFDocument Number: 91291 www.vishay.com6IRFZ44PbFTO-220AB Package Outline

0.10. irfz44espbf.pdf Size:234K _international_rectifier

PD - 95572IRFZ44ESPbFIRFZ44ELPbFHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRFZ44ES)DVDSS = 60Vl Low-profile through-hole (IRFZ44EL)l 175C Operating TemperatureRDS(on) = 0.023l Fast SwitchingGl Fully Avalanche RatedID = 48Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing tec

0.11. irfz44r.pdf Size:153K _international_rectifier

PD - 93956IRFZ44RHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.028G Fast Switching Fully Avalanche RatedID = 50*A Drop in Replacement of the IRFZ44 Sfor Linear/Audio ApplicationsDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize a

0.12. irfz44vzl irfz44vzpbf irfz44vzspbf.pdf Size:301K _international_rectifier

PD - 94755IRFZ44VZAUTOMOTIVE MOSFETIRFZ44VZSIRFZ44VZLFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 60V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 12mGDescriptionID = 57ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFE

0.13. irfz44s.pdf Size:325K _international_rectifier

PD - 9.893AIRFZ44S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRFZ44S) Low-profile through-hole (IRFZ44L) 175C Operating Temperature RDS(on) = 0.028 Fast SwitchingGID = 50A SDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon

0.14. irfz44n 1.pdf Size:52K _international_rectifier

0.15. auirfz44zstrl.pdf Size:327K _international_rectifier

PD - 97543AUIRFZ44ZAUTOMOTIVE GRADEAUIRFZ44ZSFeatures Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance 175C Operating Temperature DV(BR)DSS55V Fast Switching Repetitive Avalanche Allowed up toRDS(on) max.13.9mTjmaxG Lead-Free, RoHS CompliantID51AS Automotive Qualified *DDescriptionDSpecifically

0.16. irfz44zlpbf irfz44zpbf irfz44zspbf.pdf Size:382K _international_rectifier

PD - 95379AIRFZ44ZPbFIRFZ44ZSPbFFeatures Advanced Process TechnologyIRFZ44ZLPbF Ultra Low On-ResistanceHEXFET Power MOSFET Dynamic dv/dt Rating 175C Operating TemperatureD Fast SwitchingVDSS = 55V Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 13.9mGDescriptionID = 51ASThis HEXFET Power MOSFET utilizes the latestprocessing techniqu

0.17. irfz44ns.pdf Size:151K _international_rectifier

PD - 94153IRFZ44NSIRFZ44NL Advanced Process Technology Surface Mount (IRFZ44NS) HEXFET Power MOSFET Low-profile through-hole (IRFZ44NL)D 175C Operating TemperatureVDSS = 55V Fast Switching Fully Avalanche RatedRDS(on) = 0.0175DescriptionGAdvanced HEXFET Power MOSFETs from InternationalID = 49ARectifier utilize advanced processing techniques to achievee

0.18. irfz44vs.pdf Size:145K _international_rectifier

PD - 94050AIRFZ44VSIRFZ44VLHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = 60V 175C Operating Temperature Fast SwitchingRDS(on) = 16.5m Fully Avalanche RatedG Optimized for SMPS ApplicationsID = 55ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilize advancedprocessing te

0.19. irfz44n.pdf Size:100K _international_rectifier

PD - 94053IRFZ44NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 17.5mG Fast Switching Fully Avalanche RatedID = 49ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistan

0.20. irfz44nlpbf irfz44nspbf.pdf Size:334K _international_rectifier

IRFZ44NSPbFl IRFZ44NLPbFl l l D DSS l l l DS(on) Description G D

0.21. irfz44epbf.pdf Size:150K _international_rectifier

PD - 94822IRFZ44EPbFHEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating DVDSS = 60V 175C Operating Temperature Fast SwitchingRDS(on) = 0.023 Fully Avalanche RatedG Lead-FreeID = 48ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per silicon area.

0.22. irfz44es.pdf Size:163K _international_rectifier

PD - 9.1714IRFZ44ES/LPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 175C Operating TemperatureRDS(on) = 0.023G Fast Switching Fully Avalanche RatedID = 48ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve

0.23. auirfz44vzstrl.pdf Size:274K _international_rectifier

PD - 96354AUTOMOTIVE GRADEAUIRFZ44VZSHEXFET Power MOSFETFeaturesl Advanced Process Technology DV(BR)DSS60Vl Ultra Low On-ResistanceRDS(on) typ.9.6ml 175C Operating Temperaturel Fast Switching Gmax. 12ml Repetitive Avalanche Allowed up to TjmaxSl Lead-Free, RoHS Compliant ID 57A l Automotive Qualified *DescriptionDSpecifically designed for Automo

Irf244n

0.24. irfz44a.pdf Size:503K _samsung

Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.024 Rugged Gate Oxide Technology Lower Input CapacitanceID = 50 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.020 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratin

0.25. irfz44s irfz44l sihfz44s sihfz44l.pdf Size:790K _vishay

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.028 Surface Mount (IRFZ44S, SiHFZ44S)Qg (Max.) (nC) 67 Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) 175 C Operating TemperatureQgs (nC) 18 Fast S

0.26. irfz44l irfz44s irfz44spbf sihfz44l sihfz44s.pdf Size:815K _vishay

0.27. irfz44r sihfz44r.pdf Size:1287K _vishay

IRFZ44R, SiHFZ44RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60 Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.028 RoHS* Dynamic dV/dt RatingCOMPLIANTQg (Max.) (nC) 67 175 C Operating Temperature Fast SwitchingQgs (nC) 18 Fully Avalanche RatedQgd (nC) 25 Drop in Replacement of the

0.28. irfz44pbf sihfz44.pdf Size:1542K _vishay

IRFZ44, SiHFZ44Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.028RoHS* Fast SwitchingQg (Max.) (nC) 67COMPLIANT Ease of ParallelingQgs (nC) 18Qgd (nC) 25 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

0.29. irfz44r irfz44rpbf sihfz44r.pdf Size:1289K _vishay

0.30. irfz44 sihfz44.pdf Size:1540K _vishay

Irf244 Mosfet

0.31. lirfz44n.pdf Size:252K _lrc

LESHAN RADIO COMPANY, LTD.55V N-Channel Mode MOSFET VDS=55V LIRFZ44NRDS(ON), Vgs@10V, Ids@25A =17.5m Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche RatedTO-220DGSAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V 49ID @ TC = 10

0.32. irfz44z.pdf Size:246K _inchange_semiconductor

Irf244 Datasheet

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44ZIIRFZ44ZFEATURESStatic drain-source on-resistance:RDS(on) 13.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

0.33. irfz44zs.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRFZ44ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

0.34. irfz44v.pdf Size:245K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44V IIRFZ44VFEATURESStatic drain-source on-resistance:RDS(on) 16.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

Transistor Mosfet Irfz44n

0.35. irfz44e.pdf Size:246K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44E IIRFZ44EFEATURESStatic drain-source on-resistance:RDS(on) 23mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

0.36. irfz44cn.pdf Size:145K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44CN FEATURES Drain Current ID=49A@ TC=25 Drain Source Voltage- : VDSS= 55V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.032(Max) Fast Switching DESCRIPTION Designed for low voltage, high speed switching applications in power supplies, converters and power motor

0.37. irfz44vzs.pdf Size:257K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRFZ44VZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

0.38. irfz44vz.pdf Size:245K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44VZIIRFZ44VZFEATURESStatic drain-source on-resistance:RDS(on) 12mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

0.39. irfz44ns.pdf Size:257K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRFZ44NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

0.40. irfz44n.pdf Size:100K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES Drain Current ID=49A@ TC=25 Drain Source Voltage- : VDSS= 55V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.032(Max) Fast Switching DESCRIPTION Designed for low voltage, high speed switching applications in power supplies, converters and power motor

0.41. irfz44es.pdf Size:205K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44ESFEATURESWith TO-263(D2PAK) packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2

Datasheet: IRFZ34E, IRFZ34N, IRFZ34NL, IRFZ34NS, IRFZ35, IRFZ40, IRFZ40FI, IRFZ42, IRF630A, IRFZ44A, IRFZ44E, IRFZ44EL, IRFZ44ES, IRFZ44N, IRFZ44NL, IRFZ44NS, IRFZ45.

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